2n2222 2n2222a npn switching transistors features ? high current (max.800ma) ? low voltage (max.40v) maximum ratings symbol rating rating unit v ceo collector-emitter voltage 2n2222 2n2222a 30 40 v v cbo collector-base voltage 2n2222 2n2222a 60 75 v v ebo emitter-base voltage 2n2222 2n2222a 5.0 6.0 v i c collector current (dc) 800 ma i cm peak collector current 800 ma i bm peak base current 200 ma t j operating junction temperature -55 to +150 o c t stg storage temperature -55 to +150 o c thermal characteristics symbol rating max unit p tot total power dissipation t a 25 t c 25 500 1.2 mw w r jc thermal resistance, junction to case 146 k/w r ja thermal resistance, junction to ambient 350 k/w electrical characteristics @ 25 o c unless otherwise specified symbol parameter min max units off characteristics i cbo collector cut-off current (v cb =50vdc, i e =0) 2n2222 (v cb =50vdc, i e =0,t a =150 ) (v cb =60vdc, i e =0) 2n2222a (v cb =60vdc, i e =0,t a =150 ) --- --- --- --- 10 10 10 10 nadc uadc nadc uadc i ebo emitter cut-off current (i c =0, v eb =3vdc) --- 10 nadc h fe dc current gain (i c =0.1madc, v ce =10vdc) (i c =1.0madc, v ce =10vdc) (i c =10madc, v ce =10vdc) (i c =150madc, v ce =1.0vdc)* (i c =150madc, v ce =10vdc)* 35 50 75 50 100 300 h fe dc current gain (i c =500madc, v ce =10vdc) * 2n2222 2n2222a 30 40 --- --- dimensions inches mm dim min max min max note a .209 .230 5.309 5.842 b .178 .195 4.521 4.953 c .170 .210 4.318 5.334 d .50 ---- 12.7 e .100 2.54 typ f .028 .048 .7112 1.219 g ----- .050 ----- 1.27 h .009 .031 0.229 0.787 j 44 46 44 46 k .036 .046 0.914 1.168 l .016 .021 0.406 0.533 to-18 revision: 5 2008/01/01
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mcc tm micro commercial components www. mccsemi .com 1 of 3 ---- notes:1.high temperature solder exemption applied, see eu directive annex 7. ? lead free finish/rohs compliant(note 1) ("p" suffix designates rohs compliant. see ordering information)
symbol parameter min max units on characteristics* v ce(sat) collector-emitter saturation voltage8 (i c =150madc, i b =15madc) 2n2222 (i c =500madc, i b =50madc) --- --- 400 1.6 mvdc vdc v ce(sat) collector-emitter saturation voltage* (i c =150madc, i b =15madc) 2n2222a (i c =500madc, i b =50madc) --- --- 300 1.0 mvdc vdc v be(sat) base-emitter saturation voltage * (i c =150madc, i b =15madc) 2n2222 (i c =500madc, i b =50madc) --- --- 1.3 2.6 vdc vdc v be(sat) base-emitter saturation voltage* (i c =150madc, i b =15madc) 2n2222a (i c =500madc, i b =50madc) 0.6 --- 1.2 2.0 vdc vdc small-signal characteristics c ob output capacitance (v cb =10vdc,i e =ie=0, f=1.0mhz) --- 8.0 pf switching characteristics t d delay time --- 10 ns t r rise time --- 25 ns t s storage time --- 200 ns t f fall time i con =150madc, i bon =15madc, i b(off) =15madc --- 60 ns * pulse test: tp 300us, duty cycle 2.0% 2n2222,2n2222a mcc f t transitionfrequency (v ce =20vdc,i c =20madc, f=100mhz) 2n2222 250 --- mhz 2n2222a 300 --- mhz nf noise figure (v ce =5.0vdc,i c =200uadc, rs=2.0kohm,f=1.0khz,b=200hz) 2n2222a --- 4.0 db revision: 5 2008/01/01 tm micro commercial components www. mccsemi .com 2 of 3
mcc revision: 5 2008/01/01 tm micro commercial components www. mccsemi .com 3 of 3 products are represented on our website, harmless against all damages. ***applications disclaimer*** ***important notice*** aerospace or military applications. products offer by micro commercial components corp . are not intended for use in medical, micro commercial components corp . reserves the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . micro commercial components corp . does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights ,nor the rights of others . the user of products in such applications shall assume all risks of such use and will agree to hold micro commercial components corp . and all the companies whose ordering information device packing (part number)-bp bulk;100pcs/box
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